Titre : | Semiconductor measurements and instrumentation |
Auteurs : | W. R. Runyan ; T. J. Shaffner |
Type de document : | texte imprimé |
Editeur : | New York : McGraw-Hill, 1998 |
ISBN/ISSN/EAN : | 978-0-07-057697-1 |
Format : | 1 vol. (454 p.) / ill., couv. ill. en coul. / 23 cm |
Langues originales: | |
Index. décimale : | 621.381 (Electronique) |
Catégories : | |
Mots-clés: | Semiconducteur(mesure) Semiconducteur(instrumentation) |
Résumé : |
The definitive reference on semiconductor characterization tools! Here, in one well-organized volume, are detailed explanations of the advanced and "traditional") techniques for evaluating virtually every criterion: crystal defects, impurity concentration, lifetime, film thickness, resistivity, and such critical electrical properties as mobility, Hall effect, and conductivity type. Reliable, high-accuracy methods of measuring hardness, stress, and various kinds of surface contamination are also included. In addition to its value as a practical everyday reference, the text also serves as an excellent user's guide to the latest methods of optical microscopy, scanning electron microscopy (SEM), electron microprobe analysis, transmission electron microscopy (TEM), Auger electron spectroscopy (AES), scanning probe microscopy (SPM), and secondary ion mass spectrometry (SIMS). This is the only guide that offers such "dual coverage" of its topic -- in terms of both measurements and tools. |
Côte titre : |
S8/53893-53894 |
Exemplaires (2)
Cote | Support | Localisation | Disponibilité |
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S8/53893 | Livre | Bibliothèque centrale | Disponible |
S8/53894 | Livre | Bibliothèque centrale | Disponible |
