| Titre : | Modeling and parameter extraction techniques of silicon-based radio frequency devices |
| Auteurs : | Ao Zhang, Auteur ; Jianjun Gao, Auteur |
| Type de document : | document électronique |
| Editeur : | New Jersey : World Scientific, 2023 |
| ISBN/ISSN/EAN : | 978-981-1255366-- |
| Format : | 1 vol. (322 p.) / couv. ill. en coul. |
| Note générale : | Index |
| Langues: | Français |
| Index. décimale : | 621.384 (Radar, radio) |
| Catégories : | |
| Mots-clés: | Device Modeling Silicon-Based Parameter Extraction |
| Résumé : |
This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods. The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design |
| Note de contenu : |
Contents: - Introduction. - On-Chip Spiral Inductor. - On-Chip Spiral Transformer. - MOSFET Small-Signal Model. - MOSFET Large-Signal Model. - MOSFET Noise Model. |
| Côte titre : |
EB/046 |
| En ligne : | https://www.worldscientific.com/doi/epdf/10.1142/12805 |
Exemplaires (1)
| Cote | Support | Localisation | Disponibilité |
|---|---|---|---|
| EB/046 | Livre | Bibliothèque centrale | Disponible |
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